sotC23 high voltage transistors thermal characteristics characteristic symbol ma x unit total device dissipation frC 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg C55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage(3) v (br)ceo vdc (i c = 1.0 madc, i b = 0) m mbt5550 140 m mbt5551 160 collectorCbase breakdown voltage v (br)cbo vdc (i c = 100 adc, i e = 0) m mbt5550 160 m mbt5551 180 emitterCbase breakdown voltage v (br)ebo vdc (i e = 10 adc, i c = 0) 6.0 collector cutoff current i cbo ( v cb = 100vdc, i e = 0) m mbt5550 100 nadc ( v cb = 120vdc, i e = 0) m mbt5551 50 ( v cb = 100vdc, i e = 0, t a =100 c) m mbt5550 100 adc ( v cb = 120vdc, i e = 0, t a =100 c) m mbt5551 50 emitter cutoff current i ebo 50 nadc ( v be = 4.0vdc, i c = 0) 1. frC5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. 2 emitter 3 collector 1 base feature device marking and ordering information device marking shipping m mbt5550lt1 m1f 3000/tape&reel mmbt5551lt1 g1 3000/tape&reel ? we declare that the material of product compliance with rohs requirements. maximum ratings rating symbol value unit collector-emitter voltage mmbt5550 mmbt5551 v ceo 140 160 vdc collector-base voltage mmbt5550 mmbt5551 v cbo 160 180 vdc emitter-base voltage v ebo 6.0 vdc collector current - continuous i c 600 madc 2012-11 willas electronic corp. mm bt555xlt1
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe CC (i c = 1.0 madc, v ce = 5.0 vdc) m mbt5550 60 m mbt5551 80 (i c = 10 madc, v ce = 5.0 vdc) m mbt5550 60 250 m mbt5551 80 250 (i c = 50 madc, v ce = 5.0vdc) m mbt5550 20 m mbt5551 30 collectorCemitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc) both types 0.15 (i c = 50 madc, i b = 5.0 madc ) m mbt5550 0.25 m mbt5551 0.20 baseCemitter saturation voltage v be(sat) vdc (i c = 10 madc, i b = 1.0 madc) both types 1.0 (i c = 50 madc, i b = 5.0 madc) m mbt5550 1.2 m mbt5551 1.0 2012-11 willas electronic corp. high voltage transistors mm bt555xlt1
v ce = 1.0 v v ce = 5.0 v i c , collector current (ma) figure 15. dc current gain h fe , dc current gain (normalized) t j = +125c +25c C55c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 500 300 200 100 50 30 20 10 7.0 5.0 i b , base current (ma) figure 16. collector saturation region v be , baseCemitter voltage (volts) figure 3. collector cutCoff region i c , collector current (ma) figure 4. on voltages v ce , collector emitter voltage (volts) i c , collector current ( a) v, voltage (volts) C0.4 C0.3 C0.2 C0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 10 1 10 0 10 C1 10 C2 10 C3 10 C4 10 C5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 0.8 0.6 0.4 0.2 0 i c = 1.0 ma t j = 25c 10 ma 30 ma 100 ma 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.8 0.6 0.4 0.2 0 v ce = 30 v t j = 125c 75c 25c i c = i ces reverse forward t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 2012-11 willas electronic corp. high voltage transistors mm bt555xlt1
c obo c, capacitance (pf) 10.2 v v in 10 ms input pulse v bb r b 5.1 k 0.25 mf v in 1n914 v out r c v cc 30 v 3.0 k t r , t f < 10 ns duty cycle = 1.0% t, time (ns) values shown are for i c @ 10 ma figure 6. switching time test circuit i c , collector current (ma) figure 5. temperature coefficients v r , reverse voltage (volts) figure 7. capacitances figure i c , collector current (ma) 8. turnCon time i c , collector current (ma) figure 9. turnCoff time t, time (ns) v , temperature coefficient (mv/c) t j = 25c i c /i b = 10 t j = 25c t r @ v cc = 120 v t r @ v cc = 30 v t d @ v eb(off) = 1.0 v v cc = 120 v i c /i b = 10 t j = 25c t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v vc for v ce(sat) vb for v be(sat) t j = C55c to +135c 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2.5 2 1.5 1.0 0.5 0 C0.5 C1.0 C1.5 C2.0 C2.5 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 c ibo 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 1000 500 300 200 100 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 5000 3000 2000 1000 500 300 200 100 50 100 C8.8 v 100 2012-11 willas electronic corp. high voltage transistors mm bt555xlt1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012-11 willas electronic corp. high voltage transistors mm bt555xlt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
|
